SiGe BiCMOS Building Blocks for E- and D-Band Backhauling Front-Ends-Reference-Cited by-同舟云学术

SiGe BiCMOS Building Blocks for E- and D-Band Backhauling Front-Ends

Published:2022-04-03 Issue: Volume: Page:
ISSN:
Container-title:2021 16th European Microwave Integrated Circuits Conference (EuMIC)
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Author:

Amendola G.¹,Boccia L.¹,Centurelli F.²,Chevalier P.³,Fonte A.⁴,Karman S.⁵,Levantino S.⁵,Mazzanti A.⁶,Mustacchio C.¹,Pallotta A.⁷,Petricli I.⁶,Samori C.⁵,Tesolin F.⁵,Tommasino P.²,Traversa A.⁴,Trifiletti A.²

Affiliation:

1. University of Calabria,Dipartimento di Ingegneria Informatica, Modellistica, Elettronica e Sistemistica,Rende,Italy

2. Sapienza University of Rome,Information Engineering, Electronics and Telecommunications Department,Italy

3. STMicroelectronics,Crolles,France

4. SIAE Microelettronica,R&D Department,Cologno Monzese (MI),Italy

5. Politecnico di Milano,Dipartimento di Ingegneria Elettronica, Informazione e Bioingegneria,Milan,Italy

6. University of Pavia,Department of Electrical, Computer and Biomedical Engineering,Italy

7. STMicroelectronics,Cornaredo (MI),Italy

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9783221/9783226/09783703.pdf?arnumber=9783703

Reference13 articles.

1. A 28-nm FD-SOI 115-fs Jitter PLL-Based LO System for 24–30-GHz Sliding-IF 5G Transceivers

2. A Novel Topology of Coupled Phase-Locked Loops

3. 32.8 A 98.4fs-Jitter 12.9-to-15.1GHz PLL-Based LO Phase-Shifting System with Digital Background Phase-Offset Correction for Integrated Phased Arrays

4. Analysis and Design of a 195.6 dBc/Hz Peak FoM P-N Class-B Oscillator With Transformer-Based Tail Filtering

5. A 55 nm triple gate oxide 9 metal layers SiGe BiCMOS technology featuring 320 GHz fT / 370 GHz fMAX HBT and high-Q millimeter-wave passives