V-Band Power Amplifier MMIC on InAlN/GaN/SiC HEMTs Technology-Reference-Cited by-同舟云学术

V-Band Power Amplifier MMIC on InAlN/GaN/SiC HEMTs Technology

Published:2023-09-18 Issue: Volume: Page:
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Container-title:2023 18th European Microwave Integrated Circuits Conference (EuMIC)
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Author:

Bouslama M.¹,Piotrowicz S.¹,Michel N.¹,Trinh-Xuan L.²,Leroy J.³,Aroulanda S.¹,Driad S.³,Hamidouche L.¹,Jacquet J.C.¹,Lésvesque Q.¹,Oualli M.¹,Chang C.³,Fellon P.³,Delage S.L.¹

Affiliation:

1. III-V Lab,France

2. UMS GmbH,Germany

3. UMS S.A.S,France

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10288583/10288635/10289041.pdf?arnumber=10289041

Reference6 articles.

1. A 56–65 GHz high-power amplifier MMIC using 100 nm AlGaN/GaN dual-gate HEMTs;schwantusche;2011 6th European Microwave Integrated Circuit Conference EuMIC,2011

2. Novel AlN/GaN HEMT Electrical Model including Trapping Effects

3. Analysis and elimination of parametric oscillations in monolithic power amplifiers

4. First results on Ka band MMIC power amplifiers based on InAlGaN/GaN HEMT technology

5. An Electrothermal Model for AlGaN/GaN Power HEMTs Including Trapping Effects to Improve Large-Signal Simulation Results on High VSWR

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1. V-Band GaN Power Amplifier MMICs with High Power-Bandwidth and Low Gain Compression for RF Inter-Satellite Links;2024 IEEE/MTT-S International Microwave Symposium - IMS 2024;2024-06-16

2. Broadband GaN-Based Power Amplifier MMIC for V-Band With Saturated Output Power Over 2 W;IEEE Microwave and Wireless Technology Letters;2024-05

3. Analysis of the Gate Current’s Influence on the RF Power Performance of InAlN/GaN HEMTs;IEEE Transactions on Microwave Theory and Techniques;2024