High-Efficiency 250–320 GHz Power Amplifiers Using InP-based MOS-HEMTs
Author:
Affiliation:
1. Fujitsu Limited,Atsugi,Kanagawa,Japan,243–0197
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9999720/9999721/09999847.pdf?arnumber=9999847
Reference8 articles.
1. Broadband 300-GHz Power Amplifier MMICs in InGaAs mHEMT Technology
2. A 13.5-dBm 200–255-GHz 4-Way Power Amplifier and Frequency Source in 130-nm BiCMOS
3. 220–325-GHz 25-dB-Gain Differential Amplifier With High Common-Mode-Rejection Circuit in 60-nm InP-HEMT Technology
4. A compact H-band Power Amplifier with High Output Power
5. Enhancement of $f_{\mathrm {max}}$ to 910 GHz by Adopting Asymmetric Gate Recess and Double-Side-Doped Structure in 75-nm-Gate InAlAs/InGaAs HEMTs
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1. A Waveguide Antenna Array Module with Controlled Element Pitch < 1λ for Sub-THz Communications;2023 IEEE Conference on Antenna Measurements and Applications (CAMA);2023-11-15
2. High-Efficiency 250-320GHz Power Amplifiers Using InP-Based Metal-Oxide-Semiconductor High-Electron-Mobility Transistors;IEICE Transactions on Electronics;2023-11-01
3. Effect of oxidant sources on carbon-related impurities in ALD-Al2O3 for solid-state devices;Applied Physics Express;2023-09-01
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