220–325-GHz 25-dB-Gain Differential Amplifier With High Common-Mode-Rejection Circuit in 60-nm InP-HEMT Technology-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

220–325-GHz 25-dB-Gain Differential Amplifier With High Common-Mode-Rejection Circuit in 60-nm InP-HEMT Technology

Published:2021-06 Issue:6 Volume:31 Page:709-712
ISSN:1531-1309
Container-title:IEEE Microwave and Wireless Components Letters
language:
Short-container-title:IEEE Microw. Wireless Compon. Lett.

Author:

Hamada Hiroshi^ORCID,Tsutsumi Takuya^ORCID,Pander Adam,Matsuzaki Hideaki^ORCID,Sugiyama Hiroki^ORCID,Takahashi Hiroyuki,Nosaka Hideyuki

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Condensed Matter Physics

Link

http://xplorestaging.ieee.org/ielx7/7260/9448609/09361577.pdf?arnumber=9361577

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Low-Noise Power-Amplifier MMICs for the WR4.3 and WR3.4 Bands in a 35-nm Gate-Length InGaAs mHEMT Technology;IEEE Microwave and Wireless Technology Letters;2024-06

2. 200-W GaN Power Amplifier using 48 V Process Technology;IEICE Electronics Express;2024

3. Packaging of an Amplifier Module for Sub-THz Wireless Transmission Based on Photonics;Journal of Electromagnetic Engineering and Science;2023-11-30

4. High-Efficiency 250-320GHz Power Amplifiers Using InP-Based Metal-Oxide-Semiconductor High-Electron-Mobility Transistors;IEICE Transactions on Electronics;2023-11-01

5. A Fully Symmetric High-Performance Transformer Balun Based on TSV for RF Applications;IEEE Transactions on Components, Packaging and Manufacturing Technology;2023-07

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP