Anomaly and threshold voltage shifts in GaN and GaAs HEMTs over temperature
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Publisher
IEEE
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http://xplorestaging.ieee.org/ielx7/8189162/8230630/08230653.pdf?arnumber=8230653
Cited by 11 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Temperature Response and Power Dissipation in GaN HEMT on Diamond Substrate;2024 6th International Conference on Electrical Engineering and Information & Communication Technology (ICEEICT);2024-05-02
2. Electrical properties of AlGaN/GaN HEMT under different temperatures;International Conference on Electronic Materials and Information Engineering (EMIE 2023);2023-11-02
3. Study of the effect of multiple conductions on threshold voltage in a MIS-HEMT from 450 K down to 200 K;2023 37th Symposium on Microelectronics Technology and Devices (SBMicro);2023-08-28
4. Monolithic GaN-Based Driver and GaN Switch With Diode-Emulated GaN Technique for 50-MHz Operation and Sub-0.2-ns Deadtime Control;IEEE Journal of Solid-State Circuits;2022-12
5. A Pre-Charge Tracking Technique in the 40 MHz High-Speed Switching 48-to-5 V GaN-Based DC–DC Buck Converter for Reducing Large Self-Commutation Loss and Achieving a High Efficiency of 95.4%;IEEE Journal of Solid-State Circuits;2022-07
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