Monolithic GaN-Based Driver and GaN Switch With Diode-Emulated GaN Technique for 50-MHz Operation and Sub-0.2-ns Deadtime Control-Reference-Cited by-同舟云学术

Monolithic GaN-Based Driver and GaN Switch With Diode-Emulated GaN Technique for 50-MHz Operation and Sub-0.2-ns Deadtime Control

Published:2022-12 Issue:12 Volume:57 Page:3877-3888
ISSN:0018-9200
Container-title:IEEE Journal of Solid-State Circuits
language:
Short-container-title:IEEE J. Solid-State Circuits

Author:

Wang Tz-Wun¹,Kao Yu-Yung¹,Hung Sheng-Hsi¹,Wen Yong-Hwa¹,Yang Tzu-Hsien¹,Li Si-Yi¹,Chen Ke-Horng¹^ORCID,Zheng Kuo-Lin¹,Lin Ying-Hsi²,Lin Shian-Ru²,Tsai Tsung-Yen²

Affiliation:

1. Institute of Electrical and Computer Engineering, National Yang Ming Chiao Tung University, Hsinchu, Taiwan

2. Realtek Semiconductor Corporation, Hsinchu, Taiwan

Funder

Ministry of Science and Technology

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering

Link

http://xplorestaging.ieee.org/ielx7/4/9962295/09870744.pdf?arnumber=9870744

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1. A 6.78 MHz and 90% Efficiency Resonant Wireless Power Supply Technique With the Dual Voltage/Current Tuning Inductance to Supply 30 cm Short-Distance Base Stations for 5G Communications

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3. A 10 MHz 3-to-40V VIN tri-slope gate driving GaN DC–DC converter with 40.5 dB?V spurious noise compression and 79.3% ringing suppression for automotive applications;ke;IEEE Int Solid-State Circuits Conf (ISSCC) Dig Tech Papers,2017

4. A 3-to-40 V VIN 10-to-50 MHz 12 W isolated GaN driver with self-excited tdead minimizer achieving 0.2 ns/0.3 ns tdead, 7.9% minimum duty ratio and 50 V/ns CMTI;ke;IEEE Int Solid-State Circuits Conf (ISSCC) Dig Tech Papers,2018

5. A 3-to-40-V Automotive-Use GaN Driver With Active Bootstrap Balancing and V SW Dual-Edge Dead-Time Modulation Techniques

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