A Pre-Charge Tracking Technique in the 40 MHz High-Speed Switching 48-to-5 V GaN-Based DC–DC Buck Converter for Reducing Large Self-Commutation Loss and Achieving a High Efficiency of 95.4%-Reference-Cited by-同舟云学术

A Pre-Charge Tracking Technique in the 40 MHz High-Speed Switching 48-to-5 V GaN-Based DC–DC Buck Converter for Reducing Large Self-Commutation Loss and Achieving a High Efficiency of 95.4%

Published:2022-07 Issue:7 Volume:57 Page:2045-2053
ISSN:0018-9200
Container-title:IEEE Journal of Solid-State Circuits
language:
Short-container-title:IEEE J. Solid-State Circuits

Author:

Yang Tzu-Hsien¹,Wen Yong-Hwa¹,Chiu Chun-Kai¹,Chen Ke-Horng¹^ORCID,Lin Ying-Hsi²,Lin Shian-Ru²,Tsai Tsung-Yen²

Affiliation:

1. Institute of Electrical and Computer Engineering, National Yang Ming Chiao Tung University, Hsinchu, Taiwan

2. Realtek Semiconductor Corporation, Hsinchu, Taiwan

Funder

Ministry of Science and Technology

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering

Link

http://xplorestaging.ieee.org/ielx7/4/9809766/09722360.pdf?arnumber=9722360

Reference21 articles.

1. A domino bootstrapping 12 V GaN driver for driving an on-chip 650 V eGaN power switch for 96% high efficiency;chen;Proc IEEE Symp VLSI Circuits,2020

2. An automotive-use 2 MHz 100 VOUT flicker-free frequency-modulated GaN-based buck-boost LED driver achieving bootstrap charge balancing and 16.8 dB?V radiated EMI noise reduction;ke;IEEE Int Solid-State Circuits Conf (ISSCC) Dig Tech Papers,2021

3. A 600 V GaN active gate driver with dynamic feedback delay compensation technique achieving 22.5% turn-on energy saving;zhu;IEEE Int Solid-State Circuits Conf (ISSCC) Dig Tech Papers,2021

4. 11.4 A 48-to-80V Input 2MHz Adaptive ZVT-Assisted GaN-Based Bus Converter Achieving 14% Light-Load Efficiency Improvement

5. Investigation of high-temperature-reverse-bias (HTRB) degradation on AlGaN/GaN HEMTs

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