A GaN-Based Gate Driver with Adaptive Charge Sharing Bootstrap Technique to Improve the Conduction Loss
Author:
Affiliation:
1. National Chung Cheng University,Department of Electrical Engineering,Chaiyi,Taiwan, R.O.C.,62102
2. National Yang Ming Chiao Tung University,Department of Electronics and Electrical Engineering,Hsinchu,Taiwan, R.O.C.,30010
Funder
National Science and Technology Council
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx8/10557746/10557828/10558178.pdf?arnumber=10558178
Reference11 articles.
1. A 3-to-40-V Automotive-Use GaN Driver With Active Bootstrap Balancing and V SW Dual-Edge Dead-Time Modulation Techniques
2. A Pre-Charge Tracking Technique in the 40 MHz High-Speed Switching 48-to-5 V GaN-Based DC–DC Buck Converter for Reducing Large Self-Commutation Loss and Achieving a High Efficiency of 95.4%
3. Introducing a family of eGaN FETs for multimegahertz hard switching applications,2020
4. On-Chip HV Bootstrap Gate Driving for GaN Compatible Power Circuits Operating Above 10 MHz
5. An Integrated Driver With Bang-Bang Dead-Time Control and Charge Sharing Bootstrap Circuit for GaN Synchronous Buck Converter
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