RF CMOS Transistor Equivalent Circuit Model up to 66 GHz
Author:
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/8599618/8617121/08617426.pdf?arnumber=8617426
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. An Efficient Technique to Simulate the AC/DC Parameters of Trigate FinFETs;IEEE Access;2024
2. A W-Band Small-Signal Equivalent Circuit Modeling Based On 28nm CMOS Process;2023 Asia-Pacific Microwave Conference (APMC);2023-12-05
3. An Improved Millimeter Wave MOSFET Model Based on BSIM4;2022 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP);2022-11-27
4. A 60-GHz Variable Gain Phase Shifter With 14.8-dB Gain Tuning Range and 6-Bit Phase Resolution Across −25 °C–110 °C;IEEE Transactions on Microwave Theory and Techniques;2021-04
5. Validation and parameter extraction of a compact equivalent circuit model for an RF CMOS transistor;Journal of Computational Electronics;2020-08-17
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