Validation and parameter extraction of a compact equivalent circuit model for an RF CMOS transistor

Author:

Uqaili Junaid Ahmed,Uqaili Rabnawaz Sarmad,Memon Saleemullah,Soothar Kamlesh Kumar,Memon Kamran AliORCID,Haider Muhammad Furqan

Publisher

Springer Science and Business Media LLC

Subject

Electrical and Electronic Engineering,Modeling and Simulation,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference22 articles.

1. Tarasewicz, S.W., Macelwee, T., Ilowski, J.: An assessment of the state-of-the-art 0.5 mm bulk CMOS technology for RF applications. In: Proceedings of International Electron Devices Meeting, pp. 721–724, Washington, DC, USA, December, 1995

2. Momose, H.S., Morifuji, E., Yoshitomi, T., Ohguro, T., Saito, I., Morimoto, T., Katsumata, Y., Iwai, H.: High-frequency AC characteristics of 1.5 nm gate oxide MOSFETs. In: International Electron Devices Meeting. Technical Digest, pp. 105–108, San Francisco, CA, USA, December, 1996

3. Momose, H.S., Fujimoto, R., Otaka, S., Morifuji, E., Ohguro, T., Yoshitomi, T., Kimijima, H., Nakamura, S., Morimoto, T., Katsumata, Y., Tanimoto, H., Iwai, H.: RF noise in 1.5 nm gate oxide MOSFETs and the evaluation of the NMOS LNA circuit integrated on a chip. In: 1998 Symposium VLSI Technology Digest Technical Paper, pp. 96–97, Honolulu, USA, June, 1998

4. Larson, L.E.: Integrated circuit technology options for RFICs-present status and future directions. IEEE J. Solid-State Circuits 33, 387–399 (1998)

5. Razavi, B.: Design of Analog CMOS Integrated Circuits. McGraw-Hill Inc, USA, Oct. (2002)

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