The first GeSn FinFET on a novel GeSnOI substrate achieving lowest S of 79 mV/decade and record high Gm, int of 807 μS/μm for GeSn P-FETs-Reference-Cited by-同舟云学术

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The first GeSn FinFET on a novel GeSnOI substrate achieving lowest S of 79 mV/decade and record high Gm, int of 807 μS/μm for GeSn P-FETs

Published:2017-06 Issue: Volume: Page:
ISSN:
Container-title:2017 Symposium on VLSI Technology
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Author:

Lei Dian,Lee Kwang Hong,Bao Shuyu,Wang Wei,Masudy-Panah Saeid,Yadav Sachin,Kumar Annie,Dong Yuan,Kang Yuye,Xu Shengqiang,Wu Ying,Huang Yi-Chiau,Chung Hua,Chu Schubert S.,Kuppurao Satheesh,Tan Chuan Seng,Gong Xiao,Yeo Yee-Chia

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/7989855/7998120/07998170.pdf?arnumber=7998170

Cited by 28 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Design of Mid-Infrared Ge_1-xSn_x/Ge Heterojunction Photodetectors on GeSnOI Platform With a Bandwidth Exceeding 100 GHz;IEEE Journal of Selected Topics in Quantum Electronics;2025-01

2. CMOS Scaling for the 5 nm Node and Beyond: Device, Process and Technology;Nanomaterials;2024-05-09

3. Research progress of out-of-plane GeSn nanowires;Nanotechnology;2024-03-26

4. Composition and strain dependence of intrinsic and substitutional defect formation energies in SnxGe1−x alloys;Results in Surfaces and Interfaces;2023-08

5. FinFET-based non-linear analog signal processing modules;Microelectronics Journal;2023-01

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