Characterization and bonding configuration of SiCOH low-k films

Abstract

Using decamethylcyclopentasioxane (［Si(CH3)2O］5 as liquid precursor, SiCOH films, which have low dielectric constant (low k), good insulating ability and thermal stability, were prepared by electron cyclotron resonance chemical vapor deposition (ECR_CVD). The FTIR spectra of the films were measured to find the difference of bond structures between SiCOH films and DM5 source. It was verified that the Si—O—Si cyclic structure was retained in SiCOH films,while _CH3 radicals were lost during the deposition. The dielectric con stant decreased from 385 to 285 after the film was annealed in 400℃. With t he analysis of the bond structure of the film as deposited and annealed, we can infer that the increased content of cage structure comprised of Si—O—Si bond w ith bigger bond angle may be the reason for decreased dielectric constant.