Effect of O2-doping on bonding configuration and electric properties of SiCOH films prepared by decamethylcyclopentasiloxane electron cyclotron resonance plasma
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Published:2007
Issue:2
Volume:56
Page:1172
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ISSN:1000-3290
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Container-title:Acta Physica Sinica
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language:
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Short-container-title:Acta Phys. Sin.
Author:
Wei Yong-Xia ,Qian Xiao-Mei ,Yu Xiao-Zhu ,Ye Chao ,Ning Zhao-Yuan ,Liang Rong-Qing ,
Abstract
Carbon-doping oxide materials (SiCOH films) with k of 2.62 are prepared by electron cyclotron resonance chemical vapor deposition (ECR-CVD) from the mixture of decamethylcyclopentasioxane (D5) and oxygen (O2). This paper investigates the effect of O2-doping on bonding configuration, dielectric property and leakage current of the SiCOH low dielectric constant films. The results show that the leakage current can be reduced obviously on the premise that dielectric constant k is kept at a lower value by small O2-doping amount. For the SiCOH film deposited under O2 flow of 3 cm3/min, the dielectric constant k as low as 2.62 and leakage current of 8.2×10-9 A/cm2 can be obtained.
Publisher
Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences
Subject
General Physics and Astronomy