Application of floating microwave resonator probe to the measurement of electron density in electronegative capacitively coupled plasma

Author:

Zou Shuai ,Tang Zhong-Hua ,Ji Liang-Liang ,Su Xiao-Dong ,Xin Yu ,

Abstract

In electronegative or reactive plasmas, the problems such as negative ions floating near the sheath edge or deposition contamination cause more challenges for the diagnosis of conventional Langmiur probe. The electron density measured by microwave resonance probe is only a function of dielectric constant of plasma, there should be less or no influence of electronegative or reactive plasma. In this paper, a floating microwave resonator probe is proposed to measure electron density of capacitively coupled Ar plasma. A comparison with Langmuir double probe measurement shows that microwave resonance probe is applicable for measuring low electron density of plasma. The experimental results from the measurements of Ar/SF6 and SF6/O2 capacitively discharge driven by 40.68 MHz show that addition of SF6 into Ar plasma reduces the electron density significantly, with further increase of SF6 flow rate, electron density shows a gradual decrease. While for the addition ofO2 into SF6 discharge, the electron density continuously decreases with the increase ofO2 flow rate. Additionally, the electron density does not vary with lower frequency input power for SF6/O2 capacitively discharge driven by 40.68 MHz/13.56 MHz. The preliminary interpretations of the above experimental phenomena are presented.

Publisher

Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences

Subject

General Physics and Astronomy

Reference34 articles.

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线,采集、加工和组织学术论文而形成的新型学术文献查询和分析系统,可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容,当前同舟云学术共收录了国内外主流学术期刊6万余种,收集的期刊论文及会议论文总量共计约1.5亿篇,并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询!咨询电话:010-8811{复制后删除}0370

www.globalauthorid.com

TOP

Copyright © 2019-2024 北京同舟云网络信息技术有限公司
京公网安备11010802033243号  京ICP备18003416号-3