Effects of electrode shape on the properties of GaN-based light-emitting diode

Abstract

Using Crosslight APSYS software, we study the effect of the electrode shapes on the electrical and optical properties for the chip structures of p-GaN, InGaN/InGaN multiple quantum well, n-GaN and sapphire. Six kinds of optimized electrodes are presented. By optimzing the electrode shape, the current density distribution are more uniform, and the current crowding effects are reduced. And for the chips with optimized electrodes their electrical and optical properties are improved, and the light emission efficiencies and transferring efficiencies have been also improved.