Optimization of P/N discontinuous ohmic contact LED
Author:
Funder
National key R&D program of China
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9675142/9675144/09675183.pdf?arnumber=9675183
Reference8 articles.
1. Fabrication and Improved Performance of GaN LEDs With Finger-Type Structure
2. Effects of electrode shape on the properties of GaN-based light-emitting diode;xueyun;Acta Physica Sinica,2010
3. Experimental and Numerical Analysis of p-Electrode Patterns on the Lateral GaN-Based LEDs
4. High power GaN-based LEDs with low optical loss electrode structure
5. High-efficiency GaN-based LED with patterned SiO2 passivation layer and discontinuous current block layer;de;2019 16th China International Forum on Solid State Lighting & 2019 International Forum on Wide Bandgap Semiconductors China (SSLChina IFWS),2019
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