Author:
Hu Hui-Yong ,Liu Xiang-Yu ,Lian Yong-Chang ,Zhang He-Ming ,Song Jian-Jun ,Xuan Rong-Xi ,Shu Bin ,
Abstract
In this work, the carrier microscopic transport process of biaxial strained Si p-channel metal-oxide-semiconductor field-effect transistor (PMOSFET) under γ -ray radiation has been studied. Effect of γ-ray on devices and the relationship between the variation of device electrical characteristics and the total dose are investigated. A model for considering the degradation of threshold voltage and transconductance due to the total dose radiation is established. Based on this model, numerical simulation has been carried out. Results show that the threshold voltage of PMOSFET decreases with increasing radiation dose. At a lower total dose, the threshold voltage decreases linearly. However, at a higher total dose, it becomes saturated. The degradation can be explained by the generation of trapped charges which increase the impact possibility of carriers in the channel and induce the reduction of mobility and transconductance accordingly. Finally, the simulation results are compared with the experimental data. A good agreement is observed, indicating the validation of our proposed model.
Publisher
Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences
Subject
General Physics and Astronomy
Reference17 articles.
1. Huang R, Zhang G Y, Li Y X, Zhang X 2005 SOI CMOS Technologies and Applications (Beijing: Science Press) p3 (in Chinese) [黄如, 张国艳, 李映雪, 张兴 2005 SOI CMOS 技术及其应用 (北京: 科学出版社)第3页]
2. Xue S B, Huang R, Huang D T, Wang S H, Tan F, Wang J, An X, Zhang X 2010 Chin. Phys. B 19 117307
3. Mou W B, Xu X 2005 High Power Laser Particle Beams 17 309 (in Chinese) [牟维兵, 徐曦 2005 强激光与粒子束 17 309]
4. Yan S A, Tang M H, Zhao W, Guo H X, Zhang W L, Xu X Y, Wang X D, Ding H, Chen J W, Li Z, Zhou Y C 2014 Chin. Phys. B 23 046104
5. Hjalmarson H P, Pease R L, Witczak S C, Shaneyfelt M R, Schwank J R, Edwards A H, Hembree C E, Mattsson T R 2003 IEEE Trans. Nucl. Sci. 50 1901
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