Author:
Zhu Yan-Xu ,Cao Wei-Wei ,Xu Chen ,Deng Ye ,Zou De-Shu ,
Abstract
In this paper, the AlGaN/GaN HEMT (high electron mobility transistors) with different ohmic contact structures are fabricated, and the effect of different ohmic contact pattern on GaN HEMT electrical properties is studied. A conventional ohmic contact electrode structure and a new ohmic contact structure with a contact hole are fabricated and subjected to rapid thermal annealing (RTA) in flowing N2. After different structured AlGaN/GaN HEMTs are annealed at 750 ℃ for 30 seconds, in HEMTs with a conventional structure ohmic contact still does not form while in the device with ohmic contact holes a good ohmic contact is already formed. Then the surface morphology of different multilayer electrode structures is measured. Comparing Ti/Al/Ti/Au with Ti/Al/Ni/Au, we can conclude that the structure Ti/Al/Ni/Au has a more smooth surface after annealing. After testing the HEMT devices with different structures, higher transconductance and saturation current are found for the devices with ohmic contact holes. But a serious current collapse phenomenon has been observed when the gate voltage is set between 0.5 V and 2 V.
Publisher
Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences
Subject
General Physics and Astronomy
Reference16 articles.
1. Xie G, Edward X, Niloufar H, Zhang B, Fred Y F, Wai T N 2012 Chin. Phys. B 21 086105
2. Kong X, Wei K, Liu G G, Liu X Y 2012 Chin. Phys. B 21 128501
3. Duan B X, Yang Y T, Chen K J 2012 Acta Phys. Sin. 61 247302 (in Chinese) [段宝兴, 杨银堂, Chen K J 2012 物理学报 61 247302]
4. Duan B X, Yang Y T 2014 Acta Phys. Sin. 63 57302 (in Chinese) [段宝兴, 杨银堂 2014 物理学报 63 57302]
5. Mishra U K, Parikh P, Wu Y F 2002 Proceedings of the IEEE 90 1022
Cited by
2 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献