A novel interconnect-optimal power model considering self-heating effect

Abstract

Based on the distributed interconnect power model, a novel dynamic power model is presented in this paper, in which a non-uniform interconnection structure is adopted. This model takes into account the self-heating effect and is constrained by delay, bandwidth, area, minimum interconnect width and minimum interconnect space. The validity of the proposed model is verified by 90 nm and 65 nm complementary metal-oxide semiconductor technology. The results indicate that the proposed model can cause a power consumption reduction as high as 35%, and yet the delay, area, and bandwidth are not deteriorated, when compared with the conventional power model. The proposed optimal model can be used for designing large scale interconnect router and clock network in network-on-chip structure.