Author:
Xiao Yao ,Guo Hong-Xia ,Zhang Feng-Qi ,Zhao Wen ,Wang Yan-Ping ,Ding Li-Li ,Fan Xue ,Luo Yin-Hong ,Zhang Ke-Ying , , ,
Abstract
The single event effect sensitivity of static random access memory(SRAM) under different cumulative dose were carried out using 60Co source and heavy ions. The trend of sensitivity was obtained and the radiation damage mechanism was analyzed theoretically. This investigation shows that the variation in single event upset cross section with increasing accumulated dose appears to be consistent with the radiation-induced leakage current originating in the memory cells that affects the parameters such as low-level hold voltage and high-level fall time and induces con-imprint effect. Results obtained support the reliability analysis of the aerospace devices in space radiation environment.
Publisher
Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences
Subject
General Physics and Astronomy
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