Pattern dependence in synergistic effects of total dose on single-event upset hardness
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
https://iopscience.iop.org/article/10.1088/1674-1056/25/9/096109/pdf
Reference16 articles.
1. Dose Dependence of Single Event Upset Rate in MOS dRAMS
2. The Total Dose Dependence of the Single Event Upset Sensitivity of IDT Static RAMs
3. Issues for single-event proton testing of SRAMs
4. Total-Ionizing-Dose Effects in Modern CMOS Technologies
5. Effects of Total Dose Irradiation on Single-Event Upset Hardness
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1. Synergistic Effects of Total Ionizing Dose and Single-Event Upset in 130 nm 7T Silicon-on-Insulator Static Random Access Memory;Electronics;2024-07-30
2. Impact of Back-Gate Bias and Body-Tie on the DSOI SRAMs Under Total Ionizing Dose Irradiation;IEEE Transactions on Nuclear Science;2024-04
3. Impact of High TID Irradiation on Stability of 65 nm SRAM Cells;IEEE Transactions on Nuclear Science;2022-05
4. Effects of total ionizing dose on transient ionizing radiation upset sensitivity of 40–180 nm SRAMs;AIP Advances;2022-01-01
5. Impact of Total Ionizing Dose on Low Energy Proton Single Event Upsets in Nanometer SRAM;IEEE Transactions on Nuclear Science;2019-07
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