Synergistic effects of total ionizing dose on single event upset sensitivity in static random access memory under proton irradiation
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
https://iopscience.iop.org/article/10.1088/1674-1056/23/11/118503/pdf
Reference18 articles.
1. Discussion of the metric in characterizing the single-event effect induced by heavy ions
2. Heavy Ion Energy Effects in CMOS SRAMs
3. Total Dose Effect on the Propagation of Single Event Transients in a CMOS Inverter String
4. Variation in SEU sensitivity of dose-imprinted CMOS SRAMs
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1. The Effects of Total Ionizing Dose on the SEU Cross-Section of SOI SRAMs;Electronics;2022-10-05
2. Ionizing radiation effect on single event upset sensitivity of ferroelectric random access memory;Chinese Physics B;2017-08
3. Pattern dependence in synergistic effects of total dose on single-event upset hardness;Chinese Physics B;2016-08-30
4. Monte Carlo predictions of proton SEE cross-sections from heavy ion test data;Chinese Physics C;2016-06
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