Strain in BInGaN thin layers grown in nonpolar and semipolar directions
Author:
Publisher
Springer Science and Business Media LLC
Subject
General Physics and Astronomy,Fluid Flow and Transfer Processes
Link
https://link.springer.com/content/pdf/10.1140/epjp/s13360-022-02925-y.pdf
Reference21 articles.
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2. L. Williams, E. Kioupakis, BInGaN alloys nearly lattice-matched to gan for high-power high-efficiency visible leds. J. Appl. Phys. 111, 211107 (2017). https://doi.org/10.1063/1.4997601
3. F. Bernardini, Spontaneous and piezoelectric polarization: basic theory vs. practical recipes. In: Piprek, J. (ed.) Nitride Semiconductor Devices: Principles and Simulation, pp. 49–68. Wiley, The Federal Republic of Germany (2007)
4. R. Kudrawiec, D. Hommel, Bandgap engineering in iii-nitrides with boron and group v elements: toward applications in ultraviolet emitters. Appl. Phys. Rev. (2020). https://doi.org/10.1063/5.0025371
5. C.E. Dreyer, A. Janotti, C.G.V. de Walle, D. Vanderbilt, Correct implementation of polarization constants in wurtzite materials and impact on iii-nitrides. Phys. Rev. X 61, 021038 (2016). https://doi.org/10.1103/PhysRevX.6.021038
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