A new model of thermionic emission mechanism for non-ideal Schottky contacts and a method of extracting electrical parameters
Author:
Publisher
Springer Science and Business Media LLC
Subject
General Physics and Astronomy
Link
http://link.springer.com/content/pdf/10.1140/epjp/s13360-020-00916-5.pdf
Reference38 articles.
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3. A. Kacha, B. Akkal, Z. Benamara, M. Amrani, A. Rabhi, G. Monier, C. Robert-Goumet, L. Bideux, B. Gruzza, Effects of the GaN layers and the annealing on the electrical properties in the Schottky diodes based on nitrated GaAs. Superlattices Microstruct. 83, 827–833 (2015)
4. A. Kacha, B. Akkal, Z. Benamara, C. Robert-Goumet, G. Monier, B. Gruzza, Study of the surface state density and potential in MIS diode Schottky using the surface photovoltage method. Mol. Cryst. Liq. Cryst. 627, 66–73 (2016)
5. A. Rabehi, M. Amrani, Z. Benamara, B. Akkal, A. Hatem-Kacha, C. Robert-Goumet, G. Monier, B. Gruzza, Study of the characteristics current-voltage and capacitance-voltage in nitride GaAs Schottky diode. Europ. Phys. J. Appl. Phys. 72, 10102 (2015)
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