Design of defect-chemical properties and device performance in memristive systems-Reference-Cited by-同舟云学术

Design of defect-chemical properties and device performance in memristive systems

Author:

Lübben M.¹²,Cüppers F.¹²^ORCID,Mohr J.¹²,von Witzleben M.¹²^ORCID,Breuer U.³^ORCID,Waser R.¹²⁴^ORCID,Neumann C.⁵^ORCID,Valov I.²⁴^ORCID

Affiliation:

1. Institut für Werkstoffe der Elektrotechnik II, RWTH Aachen University, Sommerfeldstraße 24, 52074 Aachen, Germany.

2. JARA–Fundamentals for Future Information Technology, 52425 Jülich, Germany.

3. Central Institute for Engineering, Electronics and Analytics, Forschungszentrum Jülich GmbH, 52425 Jülich, Germany.

4. Peter-Grünberg-Institut (PGI 7), Forschungszentrum Jülich, Wilhelm-Johnen-Straße, 52425 Jülich, Germany.

5. Heraeus Deutschland GmbH & Co. KG Heraeusstrasse 12-14, 63450 Hanau, Germany.

Abstract

Impurities and dopants in memristive devices determine their switching kinetics, performance, and neuromorphic functionalities.

Publisher

American Association for the Advancement of Science (AAAS)

Subject

Multidisciplinary

Reference47 articles.

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