Influence of active electrode impurity on memristive characteristics of ECM devices

Author:

Michieletti Fabio,Chen Shaochuan,Weber Carsten,Ricciardi Carlo,Ohno Takeo,Valov IliaORCID

Abstract

AbstractMemristive devices are promising candidates for the implementation in more than Moore applications. Their functionalities, electrical characteristics, and behavior, such as high scalability and stability at extreme conditions such as low/high temperatures, irradiation with electromagnetic waves and high-energy particles, and fast operation are required for solving current problems in neuromorphic architectures. Electrochemical metallization (ECM)-based memristive devices are among the most relevant in this scenario owing to their low power consumption, high switching speed, showing high HRS/LRS resistance ratio in digital mode, and as well multilevel to analogue-type performance, allowing to be used in wide spectrum of applications, including as artificial neurons and/or synapses in brain-inspired hardware. Despite all the advantages and progressing industrial implementation, effects of materials selection and interactions are not sufficiently explored, and reliable design rules based on materials approach are still to be formulated by the correct choice of structures and materials combinations to ensure desired performance. In this work, we report on the effects of impurities in the copper active electrode on the electrical characteristics of Cu/Ta2O5/Pt ECM devices. The results demonstrate that Cu impurity is modulating the electrochemical behavior and switching speed due to different catalytic activity and redox reaction rates. In addition, stability and variability are improved by decreasing the number of foreign atoms. Our results provide important additional information on the factors needed to be considered for rational device design.

Funder

European Metrology Programme for Innovation and Research

Forschungszentrum Jülich GmbH

Publisher

Springer Science and Business Media LLC

Reference32 articles.

1. Golonzka O, Arslan U, Bai P, Bohr M, Baykan O, Chang Y, Chaudhari A, Chen A, Clarke J, Connor C, Das N, English C, Ghani T, Hamzaoglu F, Hentges P, Jain P, Jezewski C, Karpov I, Kothari H, Kotlyar R, Lin B, Metz M, Odonnell J, Ouellette D, Park J, Pirkle A, Quintero P, Seghete D, Sekhar M, Gupta AS, Seth M, Strutt N, Wiegand C, Yoo HJ, Fischer K (2019) Non-volatile RRAM embedded into 22FFL FinFET technology. IEEE Symposium on VLSI Technology (Kyoto, Japan: IEEE) pp T230–T231

2. Lee M-J, Lee CB, Lee D, Lee SR, Chang M, Hur JH, Kim Y-B, Kim C-J, Seo DH, Seo S, Chung U-I, Yoo I-K, Kim K (2011) A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures. Nat Mater 10:625–630

3. Mannocci P, Farronato M, Lepri N, Cattaneo L, Glukhov A, Sun Z, Ielmini D (2023) In-memory computing with emerging memory devices: status and outlook. APL Mach Learn 1:010902

4. Lelmini D, Wong H-SP (2018) In-memory computing with resistive switching devices. Nat Electron 1:333–343

5. Milano G, Pedretti G, Montano K, Ricci S, Hashemkhani S, Boarino L, Ielmini D, Ricciardi C (2022) In materia reservoir computing with a fully memristive architecture based on self-organizing nanowire networks. Nat Mater 21:195–202

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