Momentum-matching and band-alignment van der Waals heterostructures for high-efficiency infrared photodetection

Author:

Chen Yunfeng12ORCID,Tan Congwei3ORCID,Wang Zhen1ORCID,Miao Jinshui12ORCID,Ge Xun12ORCID,Zhao Tiange1ORCID,Liao Kecai12ORCID,Ge Haonan1ORCID,Wang Yang1ORCID,Wang Fang1ORCID,Zhou Yi1,Wang Peng1ORCID,Zhou Xiaohao1ORCID,Shan Chongxin4ORCID,Peng Hailin3ORCID,Hu Weida12ORCID

Affiliation:

1. State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China.

2. University of Chinese Academy of Sciences, Beijing 100049, China.

3. Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, China.

4. Henan Key Laboratory of Diamond Optoelectronic Materials and Devices, School of Physics and Engineering, Zhengzhou University, Zhengzhou 450001, China.

Abstract

Two-dimensional (2D) infrared photodetectors always suffer from low quantum efficiency (QE) because of the limited atomically thin absorption. Here, we reported 2D black phosphorus (BP)/Bi 2 O 2 Se van der Waals (vdW) photodetectors with momentum-matching and band-alignment heterostructures to achieve high QE. The QE was largely improved by optimizing the generation, suppressing the recombination, and improving the collection of photocarriers. Note that momentum-matching BP/Bi 2 O 2 Se heterostructures in k -space lead to the highly efficient generation and transition of photocarriers. The recombination process can be largely suppressed by lattice mismatching–immune vdW interfaces. Furthermore, type II BP/Bi 2 O 2 Se vdW heterostructures could also assist fast transport and collection of photocarriers. By constructing momentum-matching and band-alignment heterostructures, a record-high QE of 84% at 1.3 micrometers and 76.5% at 2 micrometers have been achieved in BP/Bi 2 O 2 Se vdW photodetectors.

Publisher

American Association for the Advancement of Science (AAAS)

Subject

Multidisciplinary

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