High-performance and scalable metal-chalcogenide semiconductors and devices via chalco-gel routes-Reference-Cited by-同舟云学术

High-performance and scalable metal-chalcogenide semiconductors and devices via chalco-gel routes

Published:2018-04-06 Issue:4 Volume:4 Page:
ISSN:2375-2548
Container-title:Science Advances
language:en
Short-container-title:Sci. Adv.

Author:

Kwon Sung Min¹^ORCID,Won Jong Kook²^ORCID,Jo Jeong-Wan¹,Kim Jaehyun¹^ORCID,Kim Hee-Joong¹,Kwon Hyuck-In¹,Kim Jaekyun³,Ahn Sangdoo²,Kim Yong-Hoon⁴,Lee Myoung-Jae⁵^ORCID,Lee Hyung-ik⁶,Marks Tobin J.⁷^ORCID,Kim Myung-Gil²^ORCID,Park Sung Kyu¹^ORCID

Affiliation:

1. School of Electrical and Electronics Engineering, Chung-Ang University, Seoul 06974, Korea.

2. Department of Chemistry, Chung-Ang University, Seoul 06974, Korea.

3. Department of Photonics and Nanoelectronics, Hanyang University, Ansan, Korea.

4. School of Advanced Materials Science and Engineering and SKKU Advanced Institute of Nanotechnology, Sungkyunkwan University, Suwon, Korea.

5. Intelligent Devices and Systems Research Group, Daegu Gyeongbuk Institute of Science and Technology, Daegu 42988, Korea.

6. Samsung Advanced Institute of Technology, Samsung Electronics Co., Suwon 443-803, Korea.

7. Department of Chemistry and the Materials Research Center, Northwestern University, Evanston, IL 60208, USA.

Abstract

Chalco-gel–based metal-chalcogenide semiconductors and scalable high-performance electronic devices were demonstrated.

Funder

the National Research Foundation of Korea (NRF) grant funded by the Korea government

the National Science Foundation MRSEC program at the Materials Research Center of Northwestern University

The Industrial Strategic Technology Development Program funded by MOTIE/KEIT.

Publisher

American Association for the Advancement of Science (AAAS)

Subject

Multidisciplinary

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