Tunable Field Control Over the Binding Energy of Single Dopants by a Charged Vacancy in GaAs

Abstract

Tuning Semiconductor Dopants Dopants in semiconductors can alter their conductivity or introduce spin centers that alter their magnetic properties. Generally, the charge state of a dopant and field it creates are fixed. Lee and Gupta (p. 1807 , published online 9 December) studied Mn dopants in GaAs with a low-temperature scanning tunneling microscope (STM). Using the STM to position As vacancies at different distances from the Mn dopants revealed that the As vacancy tuned the local electrostatic field of the dopant.