Reversible oxygen migration and phase transitions in hafnia-based ferroelectric devices-Reference-Cited by-同舟云学术

Reversible oxygen migration and phase transitions in hafnia-based ferroelectric devices

Published:2021-05-07 Issue:6542 Volume:372 Page:630-635
ISSN:0036-8075
Container-title:Science
language:en
Short-container-title:Science

Author:

Nukala Pavan¹²^ORCID,Ahmadi Majid¹³^ORCID,Wei Yingfen¹³^ORCID,de Graaf Sytze¹^ORCID,Stylianidis Evgenios¹⁴,Chakrabortty Tuhin²,Matzen Sylvia⁵^ORCID,Zandbergen Henny W.⁶,Björling Alexander⁷^ORCID,Mannix Dan⁸⁹¹⁰,Carbone Dina⁷^ORCID,Kooi Bart¹³^ORCID,Noheda Beatriz¹³^ORCID

Affiliation:

1. Zernike Institute of Advanced Materials, University of Groningen, 9747 AG Groningen, Netherlands.

2. Centre for Nano Science and Engineering, Indian Institute of Science, Bengaluru, 560012, India.

3. CogniGron (Groningen Cognitive Systems and Materials Center), University of Groningen, 9747 AG Groningen, Netherlands.

4. Department of Physics and Astronomy, University College London, London WC1E 6BT, UK.

5. Center for Nanoscience and Nanotechnology, Paris-Saclay University, CNRS, 91120 Palaiseau, France.

6. Kavli Institute of Nanoscience, Faculty of Applied Sciences, Delft University of Technology, 2628 CJ Delft, Netherlands.

7. MAX IV Laboratory, Lund University, SE-221 00 Lund, Sweden.

8. University Grenoble Alpes, CNRS, Institut Néel, 38042 Grenoble, France.

9. European Spallation Source, SE-221 00 Lund, Sweden.

10. Department of Chemistry, Aarhus University, DK-8000 Aarhus, Denmark.

Abstract

A role for vacancies Hafnia-based materials are of interest because of their potential use in microelectronic components. Hafnia-oxide is a ferroelectric material, but whether the polarization switching comes from the polar crystal phases or the migration of oxygen vacancies has remained an open question. Nukala et al. attempted to resolve this controversy by conducting electron microscopy during the operation of a hafnium zirconium oxide capacitor. The authors found that vacancy migration is intertwined with the ferroelectric switching, which has implications for the use of these materials in a range of microelectronic applications. Science , this issue p. 630

Funder

H2020 Marie Skłodowska-Curie Actions

China Scholarship Council

Renatech

Cognigron

Publisher

American Association for the Advancement of Science (AAAS)

Subject

Multidisciplinary

Reference52 articles.

1. Ferroelectricity in hafnium oxide thin films

2. Ultrathin Hf0.5Zr0.5O2 Ferroelectric Films on Si