Nitrogen-Plasma Energetics Effect on Phase Separation of InxGa1-xN Nanorods Grown by RF-Plasma Assisted Molecular Beam Epitaxy
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering
Link
http://stacks.iop.org/1882-0786/6/i=11/a=111003/pdf
Reference34 articles.
1. Phase separation and ordering in InGaN alloys grown by molecular beam epitaxy
2. Alloy broadening in photoluminescence spectra ofAlxGa1−xAs
3. Effect of Precise Control of V/III Ratio on In-Rich InGaN Epitaxial Growth
4. Characteristics of InGaN with High In Concentrations Grown on ZnO at Low Temperatures
5. Epitaxial Growth of InGaN Nanowire Arrays for Light Emitting Diodes
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1. Effect of direct-current sputtering plasma power on growth of nanocolumnar titanium oxide heat mirrors;Thin Solid Films;2020-08
2. Investigation of plasma dynamics during the growth of amorphous titanium dioxide thin films;Japanese Journal of Applied Physics;2018-04-04
3. Simulation and fabrication of N-polar GaN-based blue-green light-emitting diodes with p-type AlGaN electron blocking layer;Journal of Materials Science: Materials in Electronics;2018-03-31
4. Effects of plasma power on material and optical quality of GaN nanorods grown by plasma-assisted molecular beam epitaxy;Applied Physics Express;2014-10-20
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