Local gate leakage current induced by inhomogeneous epitaxial growth in AlGaN/GaN high-electron-mobility transistors
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering
Link
http://stacks.iop.org/1882-0786/9/i=3/a=031002/pdf
Reference19 articles.
1. Present Status and Future Prospect of Widegap Semiconductor High-Power Devices
2. Direct imaging of reverse-bias leakage through pure screw dislocations in GaN films grown by molecular beam epitaxy on GaN templates
3. Analysis of leakage current mechanisms in Schottky contacts to GaN and Al0.25Ga0.75N∕GaN grown by molecular-beam epitaxy
4. Gate current analysis of AlGaN/GaN on silicon heterojunction transistors at the nanoscale
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3. Magnesium ion-implantation-based gallium nitride p-i-n photodiode for visible-blind ultraviolet detection;Photonics Research;2019-07-15
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