Effect of boron incorporation on light emission characteristics of UV BAlGaN/AlN quantum well structures
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering
Reference22 articles.
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1. Investigation on the performance of deep ultraviolet edge emitting laser diodes using graded undoped AlGaN electron blocking layer (EBL);Micro and Nanostructures;2024-08
2. A Design and Comparative Investigation of Graded Al x Ga 1– x N EBL for W‐B 0.375 GaN/W‐B 0.45 GaN Edge Emitting Laser Diode on AlN Substrate;Chinese Journal of Electronics;2022-07
3. Deep ultraviolet spectra from BGaN quantum dot structures;Materials Science in Semiconductor Processing;2022-05
4. The 2020 UV emitter roadmap;Journal of Physics D: Applied Physics;2020-09-16
5. BAlGaN alloys nearly lattice-matched to AlN for efficient UV LEDs;Applied Physics Letters;2019-12-02
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