Complementary resistive switching of annealed Ti/Cu2O/Ti stacks
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering
Link
http://stacks.iop.org/1882-0786/9/i=4/a=045801/pdf
Reference27 articles.
1. Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges
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3. Compact Modeling of Complementary Resistive Switching Devices Using Memdiodes;IEEE Transactions on Electron Devices;2019-06
4. Design of CMOS Compatible, High-Speed, Highly-Stable Complementary Switching with Multilevel Operation in 3D Vertically Stacked Novel HfO2 /Al2 O3 /TiO x (HAT) RRAM;Advanced Electronic Materials;2018-01-08
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