Intrinsic anionic rearrangement by extrinsic control: transition of RS and CRS in thermally elevated TiN/HfO2/Pt RRAM-Reference-Cited by-同舟云学术

Intrinsic anionic rearrangement by extrinsic control: transition of RS and CRS in thermally elevated TiN/HfO2/Pt RRAM

Published:2017 Issue:47 Volume:9 Page:18908-18917
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Banerjee Writam¹²³⁴⁵^ORCID,Cai Wu Fa¹²³⁴⁵,Zhao Xiaolong¹²³⁴⁵,Liu Qi¹²³⁴⁵,Lv Hangbing¹²³⁴⁵,Long Shibing¹²³⁴⁵,Liu Ming¹²³⁴⁵

Affiliation:

1. Key Laboratory of Microelectronic Devices & Integrated Technology

2. Institute of Microelectronics

3. Chinese Academy of Sciences

4. Beijing 100029

5. China

Abstract

Extrinsic bias controlled, intrinsic anionic rearrangement-based transition from resistive switching to 100 times higher nonlinear complementary switching, and the control of the same at thermally elevated TiN/HfO₂/Pt RRAM.

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2017/NR/C7NR06628G

Reference42 articles.

1. Recent progress in resistive random access memories: Materials, switching mechanisms, and performance

2. Emerging memories: resistive switching mechanisms and current status

3. Study of Multi-level Characteristics for 3D Vertical Resistive Switching Memory

4. Electronic imitation of behavioral and psychological synaptic activities using TiOx/Al2O3-based memristor devices

Cited by 43 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Attaining inhibition of sneak current and versatile logic operations in a singular halide perovskite memristive device by introducing appropriate interface barriers;Nanoscale;2024

2. Spinel ferrites for resistive random access memory applications;Emergent Materials;2023-11-22

3. Amorphous Oxide Semiconductor Memristors: Brain-inspired Computation;Advanced Memory Technology;2023-10-09

4. Performance Improvement of AlN-Based RRAMs Using Ag Layer for Hardware Security Applications;IEEE Transactions on Electron Devices;2023-08

5. Recent progress in optoelectronic memristors for neuromorphic and in-memory computation;Neuromorphic Computing and Engineering;2023-05-25