A simple method for forming compositionally graded InxGa1−xAs1−ySbybase of double-heterojunction bipolar transistors modulating CBr4-doping-precursor flow in metalorganic chemical vapor deposition-Reference-Cited by-同舟云学术

A simple method for forming compositionally graded InxGa1−xAs1−ySbybase of double-heterojunction bipolar transistors modulating CBr4-doping-precursor flow in metalorganic chemical vapor deposition

Published:2014-11-01 Issue:11 Volume:7 Page:114102
ISSN:1882-0778
Container-title:Applied Physics Express
language:
Short-container-title:Appl. Phys. Express

Author:

Hoshi Takuya,Kashio Norihide,Sugiyama Hiroki,Yokoyama Haruki,Kurishima Kenji,Ida Minoru,Matsuzaki Hideaki,Gotoh Hideki

Publisher

IOP Publishing

Subject

General Physics and Astronomy,General Engineering

Link

http://stacks.iop.org/1882-0786/7/i=11/a=114102/pdf

Reference19 articles.

1. 130nm InP DHBTs with ft >0.52THz and fmax >1.1THz

2. Sub 50 nm InP HEMT Device with Fmax Greater than 1 THz

3. Pseudomorphic InP/InGaAs Heterojunction Bipolar Transistors (PHBTs) Experimentally Demonstrating f_T = 765 GHz at 25°C Increasing to f_T = 845 GHz at -55°C

4. 600 GHz InP/GaAsSb/InP DHBTs Grown by MOCVD with a Ga(As,Sb) Graded-Base and f_T x BV_CEO ≫ 2.5 THz-V at Room Temperature

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5. InGaP/GaAsSb/InGaAsSb/InP Double Heterojunction Bipolar Transistors With Record f t of 813 GHz;IEEE Electron Device Letters;2020-05