In situ doped epitaxial growth of highly dopant-activated n+-Ge layers for reduction of parasitic resistance in Ge-nMISFETs
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering
Link
http://stacks.iop.org/1882-0786/7/i=10/a=106501/pdf
Reference17 articles.
1. Physical mechanism determining Ge p- and n-MOSFETs mobility in high Ns region and mobility improvement by atomically flat GeOx/Ge interfaces
2. High-performance poly-Ge short-channel metal–oxide–semiconductor field-effect transistors formed on SiO2layer by flash lamp annealing
3. Diffusion and activation of n-type dopants in germanium
4. Fermi-level pinning and charge neutrality level in germanium
5. Low-Contact-Resistivity Nickel Germanide Contacts on n+Ge with Phosphorus/Antimony Co-Doping and Schottky Barrier Height Lowering
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2. Fabrication of Ge:Ga Hyperdoped Materials and Devices Using CMOS-Compatible Ga and Ge Hydride Chemistries;ACS Applied Materials & Interfaces;2018-10-09
3. Epitaxial growth of heavily doped n+-Ge layers using metal-organic chemical vapor deposition with in situ phosphorus doping;Thin Solid Films;2018-01
4. Analysis of the Heterogate Electron–Hole Bilayer Tunneling Field-Effect Transistor With Partially Doped Channels: Effects on Tunneling Distance Modulation and Occupancy Probabilities;IEEE Transactions on Electron Devices;2018-01
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