Fabrication of Ge:Ga Hyperdoped Materials and Devices Using CMOS-Compatible Ga and Ge Hydride Chemistries
Author:
Funder
Air Force Office of Scientific Research
Publisher
American Chemical Society (ACS)
Subject
General Materials Science
Link
https://pubs.acs.org/doi/pdf/10.1021/acsami.8b10046
Reference37 articles.
1. Properties of Heavily Doped n‐Type Germanium
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5. Reduced-pressure chemical vapor deposition of boron-doped Si and Ge layers
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