Physical mechanism determining Ge p- and n-MOSFETs mobility in high N<inf>s</inf> region and mobility improvement by atomically flat GeO<inf>x</inf>/Ge interfaces-Reference-Cited by-同舟云学术

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Physical mechanism determining Ge p- and n-MOSFETs mobility in high Ns region and mobility improvement by atomically flat GeOx/Ge interfaces

Published:2012-12 Issue: Volume: Page:
ISSN:
Container-title:2012 International Electron Devices Meeting
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Author:

Zhang Rui,Huang Po-Chin,Lin Ju-Chin,Takenaka Mitsuru,Takagi Shinichi

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/6471855/6478950/06479051.pdf?arnumber=6479051

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Heterogeneous 3-D Sequential CFETs With Ge (110) Nanosheet p-FETs on Si (100) Bulk n-FETs;IEEE Transactions on Electron Devices;2024-01

2. Comparative investigation into the interface passivation of Ge n- and p-MOSFETs with various 2D materials;Applied Physics Express;2019-09-03

3. Stability of strain in Si layers formed on SiGe/Si(110) heterostructures;Semiconductor Science and Technology;2018-11-15

4. Germanium CMOS potential from material and process perspectives: Be more positive about germanium;Japanese Journal of Applied Physics;2017-10-30

5. Growth of strained Si/relaxed SiGe heterostructures on Si(110) substrates using solid-source molecular beam epitaxy;Semiconductor Science and Technology;2017-09-29

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