Comparative study of silicon nanowire transistors with triangular-shaped cross sections
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Link
http://stacks.iop.org/1347-4065/54/i=4S/a=04DN01/pdf
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4. Overview and status of metal S/D Schottky-barrier MOSFET technology
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1. Electrical Characteristics of In0.53Ga0.47As Gate-All-Around MOSFETs With Different Nanowire Shapes;IEEE Transactions on Electron Devices;2022-08
2. Novel fabrication for vertically stacked inverted triangular and diamond-shaped silicon nanowires on (1 0 0) single crystal silicon wafer;Journal of Micromechanics and Microengineering;2019-11-14
3. Gas sensing properties of silicon nanowires with different cross-sectional shapes toward ammonia: a first-principles study;Journal of Nanoparticle Research;2019-07
4. Exploring Low Power Design Through Performance Analysis of FinFET for Fin Shape Variations;Advances in Intelligent Systems and Computing;2018-09-29
5. Band Structure Effects in Extremely Scaled Silicon Nanowire MOSFETs With Different Cross Section Shapes;IEEE Transactions on Electron Devices;2015-11
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