Optimization of RF Performance of Metallic Source/Drain SOI MOSFETs Using Dopant Segregation at the Schottky Interface-Reference-Cited by-同舟云学术

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Optimization of RF Performance of Metallic Source/Drain SOI MOSFETs Using Dopant Segregation at the Schottky Interface

Published:2009-11 Issue:11 Volume:30 Page:1197-1199
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Valentin R.,Dubois E.,Larrieu G.,Raskin J.-P.,Dambrine G.,Breil N.,Danneville F.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/55/5291954/05282627.pdf?arnumber=5282627

Cited by 21 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. The Schottky barrier transistor in emerging electronic devices;Nanotechnology;2023-06-15

2. Comparative Analysis of Dual Metal Gate Fully Depleted SOI FET With/Without δ-Doped Insulated Layer for AF Application;Micro-Electronics and Telecommunication Engineering;2023

3. Dual Metal Gate Dielectric Engineered Dopant Segregated Schottky Barrier MOSFET With Reduction in Ambipolar Current;Silicon;2021-01-06

4. Charge plasma based source/drain engineered Schottky Barrier MOSFET: Ambipolar suppression and improvement of the RF performance;Superlattices and Microstructures;2018-01

5. Effect of asymmetrical double-pockets and gate-drain underlap on Schottky barrier tunneling FET: Ambipolar conduction vs. high frequency performance;Superlattices and Microstructures;2016-08

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