Dual Metal Gate Dielectric Engineered Dopant Segregated Schottky Barrier MOSFET With Reduction in Ambipolar Current
Author:
Publisher
Springer Science and Business Media LLC
Subject
Electronic, Optical and Magnetic Materials
Link
https://link.springer.com/content/pdf/10.1007/s12633-020-00921-4.pdf
Reference28 articles.
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3. Martín-Martínez MJ, Couso C, Pascual E, Rengel R (2014) Monte Carlo study of dopant-segregated Schottky barrier SoI MOSFETs: Enhancement of the RF performance. IEEE Trans Electron Devices 61(12):3955–3961. https://doi.org/10.1109/TED.2014.2360468
4. Kale S (2020) Performance improvement and analysis of PtSi Schottky barrier p-MOSFET based on charge plasma concept for low power applications. Silicon 12:479–485
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