Growth of α-Cr2O3 single crystals by mist CVD using ammonium dichromate
Author:
Funder
Japan Society for the Promotion of Science
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering
Link
http://stacks.iop.org/1882-0786/11/i=11/a=111101/pdf
Reference27 articles.
1. Recent progress in Ga2O3power devices
2. Wide-bandgap semiconductor materials: For their full bloom
3. Physics on development of open-air atmospheric pressure thin film fabrication technique using mist droplets: Control of precursor flow
4. Heteroepitaxy of Corundum-Structured α-Ga2O3Thin Films on α-Al2O3Substrates by Ultrasonic Mist Chemical Vapor Deposition
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1. High-quality Cr2O3 - Ga2O3 solid solutions films grown by mist-CVD epitaxy;Journal of Alloys and Compounds;2024-08
2. Step-edge-guided nucleation and growth mode transition of α-Ga2O3 heteroepitaxy on vicinal sapphire;Chinese Physics B;2024-07-01
3. High-quality crystalline NiO/β-Ga2O3 p–n heterojunctions grown by the low-cost and vacuum-free mist-CVD for device applications;Science China Materials;2024-04-25
4. Characterization of ZnO Crystals of Various Geometries Grown by Mist Chemical Vapor Deposition on a c‐Plane Sapphire Substrate;physica status solidi (b);2024-03-17
5. Growth of Cr2O3 on n-Silicon Substrate using AACVD and its Application as a Hole Selective Layer;Silicon;2023-12-11
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