Dependence of conduction mechanisms in heavily Al-doped 4H-SiC epilayers on Al concentration-Reference-Cited by-同舟云学术

Dependence of conduction mechanisms in heavily Al-doped 4H-SiC epilayers on Al concentration

Published:2018-08-30 Issue:10 Volume:11 Page:101302
ISSN:1882-0778
Container-title:Applied Physics Express
language:
Short-container-title:Appl. Phys. Express

Author:

Matsuura Hideharu,Takeshita Akinobu,Imamura Tatsuya,Takano Kota,Okuda Kazuya,Hidaka Atsuki,Ji Shiyang,Eto Kazuma,Kojima Kazutoshi,Kato Tomohisa,Yoshida Sadafumi,Okumura Hajime

Publisher

IOP Publishing

Subject

General Physics and Astronomy,General Engineering

Link

http://stacks.iop.org/1882-0786/11/i=10/a=101302/pdf

Reference42 articles.

1. Epitaxial Growth of Thick Multi-Layer 4H-SiC for the Fabrication of Very High-Voltage C-Face n-Channel IGBT

2. Low Resistivity, Thick Heavily Al-Doped 4H-SiC Epilayers Grown by Hot-Wall Chemical Vapor Deposition

3. The growth of low resistivity, heavily Al-doped 4H–SiC thick epilayers by hot-wall chemical vapor deposition

4. Electrical transport properties of aluminum-implanted 4H–SiC

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