Effects of postmetallization annealing on interface properties of Al2O3/GaN structures
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering
Link
http://stacks.iop.org/1882-0786/11/i=12/a=124102/pdf
Reference31 articles.
1. Insulated gate and surface passivation structures for GaN-based power transistors
2. An over 100 W n-GaN/n-AlGaN/GaN MIS-HEMT power amplifier for wireless base station applications
3. Current linearity and operation stability in Al2O3-gate AlGaN/GaN MOS high electron mobility transistors
4. State of the art on gate insulation and surface passivation for GaN-based power HEMTs
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