A study on the etching characteristics of magnetic tunneling junction materials using DC pulse-biased inductively coupled plasmas
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Link
http://stacks.iop.org/1347-4065/54/i=1S/a=01AE01/pdf
Reference31 articles.
1. Exchange-biased magnetic tunnel junctions and application to nonvolatile magnetic random access memory (invited)
2. Progress and outlook for MRAM technology
3. Dry etching of CoFe films using a CH4∕Ar inductively coupled plasma for magnetic random access memory application
4. Magnetoresistive random access memory using magnetic tunnel junctions
5. Spin dependent tunnel junctions for memory and read-head applications
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