Dry etching of CoFe films using a CH4∕Ar inductively coupled plasma for magnetic random access memory application-Reference-Cited by-同舟云学术

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Dry etching of CoFe films using a CH4∕Ar inductively coupled plasma for magnetic random access memory application

Published:2009-07 Issue:4 Volume:27 Page:818-820
ISSN:0734-2101
Container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
language:en
Short-container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films

Author:

Um Doo-Seung,Kim Dong-Pyo,Woo Jong-Chang,Kim Chang-Il,Lee Sung-Kwon,Jung Tae-Woo,Moon Seung-Chan

Publisher

American Vacuum Society

Subject

Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Link

http://avs.scitation.org/doi/pdf/10.1116/1.3155401

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. The Reflectance Characteristics of an Inverse Moth-Eye Structure in a Silicon Substrate Depending on SF6/O2 Plasma Etching Conditions;Micromachines;2022-09-20

2. High-density plasma etching characteristics of aluminum-doped zinc oxide thin films in Cl2/Ar plasma;Materials Research Express;2020-10-01

3. Dry etching strategy of spin-transfer-torque magnetic random access memory: A review;Journal of Vacuum Science & Technology B;2020-09

4. Anisotropic etching of CoFeB magnetic thin films in C 2 H 5 OH/Ar plasma;Thin Solid Films;2017-09

5. Inductively coupled plasma reactive ion etching of CoFeB magnetic thin films in a CH3COOH/Ar gas mixture;Vacuum;2015-09

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