Theoretical study of fabrication of line-and-space patterns with 7 nm quarter-pitch (7 nm space width and 21 nm line width) using electron beam lithography with chemically amplified resist processes: I. Relationship between sensitivity and chemical gradient
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Link
http://stacks.iop.org/1347-4065/54/i=5/a=056501/pdf
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1. High performance mask fabrication process for the next-generation mask production
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