Influence of interface structure on electrical properties of NiGe/Ge contacts
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Link
http://stacks.iop.org/1347-4065/54/i=5S/a=05EA01/pdf
Reference28 articles.
1. Electron mobility enhancement in strained-germanium n-channel metal-oxide-semiconductor field-effect transistors
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3. Manufacturable Processes for $\leq$ 32-nm-node CMOS Enhancement by Synchronous Optimization of Strain-Engineered Channel and External Parasitic Resistances
4. An integrated methodology for accurate extraction of S/D series resistance components in nanoscale MOSFETs
5. Advanced model and analysis of series resistance for CMOS scaling into nanometer regime. II. Quantitative analysis
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Formation and specific contact resistivity of NiGe on polycrystalline Ge made by flash lamp annealing;Journal of Alloys and Compounds;2024-06
2. Interface structures and electrical properties of micro-fabricated epitaxial Hf-digermanide/n-Ge(001) contacts;IEEE Journal of the Electron Devices Society;2021
3. Impact of crystalline structures on the thermal stability and Schottky barrier height of NiGe/Ge contact;Applied Physics Letters;2018-12-17
4. Formation of epitaxial Hf digermanide/Ge(001) contact and its crystalline properties;Japanese Journal of Applied Physics;2018-06-22
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