Current transport mechanism of AlGaN/GaN Schottky barrier diode with fully recessed Schottky anode-Reference-Cited by-同舟云学术

Current transport mechanism of AlGaN/GaN Schottky barrier diode with fully recessed Schottky anode

Published:2014-12-04 Issue:1 Volume:54 Page:011001
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Yao Yao,Zhong Jian,Zheng Yue,Yang Fan,Ni Yiqiang,He Zhiyuan,Shen Zhen,Zhou Guilin,Wang Shuo,Zhang Jincheng,Li Jin,Zhou Deqiu,Wu Zhisheng,Zhang Baijun,Liu Yang

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/54/i=1/a=011001/pdf

Reference19 articles.

1. Forward current transport mechanisms in Ni/Au-AlGaN/GaN Schottky diodes

2. Leakage current by Frenkel–Poole emission in Ni/Au Schottky contacts on Al0.83In0.17N/AlN/GaN heterostructures

3. Analysis of leakage current mechanisms in Schottky contacts to GaN and Al0.25Ga0.75N∕GaN grown by molecular-beam epitaxy

4. Analysis of the temperature-dependent current-voltage characteristics and the barrier-height inhomogeneities of Au/GaN Schottky diodes

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